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february 2008 rev 2 1/17 17 std10nm65n - STF10NM65N stp10nm65n - stu10nm65n n-channel 650 v - 0.43 ? - 9 a - to-220 - to-220fp- ipak - dpak second generation mdmesh? power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices implements the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d std10nm65n 710 v < 0.48 ? 9 a STF10NM65N 710 v < 0.48 ? 9 a (1) 1. limited only by maximum temperature allowed stp10nm65n 710 v < 0.48 ? 9 a stu10nm65n 710 v < 0.48 ? 9 a to-220 to-220fp ipak 1 2 3 1 2 3 3 2 1 1 3 dpak table 1. device summary order codes marking package packaging std10nm65n 10nm65n dpak tape & reel STF10NM65N 10nm65n to-220fp tube stp10nm65n 10nm65n to-220 tube stu10nm65n 10nm65n ipak tube www.st.com
contents std10nm65n - stf10nm6 5n - stp10nm65n - stu10nm65n 2/17 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
std10nm65n - STF10NM65N - stp10nm6 5n - stu10nm65n electrical ratings 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220/ipak dpak to-220fp v ds drain-source voltage (v gs = 0) 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 9 9 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 5.7 5.7 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 36 36 (1) a p tot total dissipation at t c = 25 c 90 25 w dv/dt (3) 3. i sd 9 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c = 25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter to-220 ipak dpak to-220fp unit r thj-case thermal resistance junction-case max 1.38 5 c/w r thj-pcb thermal resistance junction-pcb max -- -- 50 -- c/w r thj-amb thermal resistance junction-amb max 62.5 100 -- 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 300 mj
electrical characteristics std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 4/17 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v dv/dt (1) 1. characteristics value at turn off on inductive load drain source voltage slope v dd = 520 v, i d = 9 a, v gs = 10 v 25 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4.5 a 0.43 0.48 ? table 6. dynamic symbol parameter test cond itions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 4.5 a 7.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 850 53 4 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v 90 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 9 a, v gs = 10 v, (see figure 19) 25 14 4 nc nc nc
std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n electrical characteristics 5/17 table 7. switching times symbol parameter test co nditions min typ max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 325 v, i d = 4.5 a r g =4.7 ? v gs = 10 v (see figure 18) 12 8 50 20 ns ns ns ns table 8. source drain diode symbol parameter test co nditions min typ max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 9 36 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 9 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 20) 330 3 19 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 20) 430 4 19 ns c a
electrical characteristics std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 6/17 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak/ipak figure 7. thermal impedance for dpak/ipak
std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n electrical characteristics 7/17 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate source voltage figure 13. capacitance variations
electrical characteristics std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 8/17 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized bv dss vs temperature
std10nm65n - STF10NM65N - stp10n m65n - stu10nm65n test circuit 9/17 3 test circuit figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform
package mechanical data std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 10/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n package mechanical data 11/17 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 12/17 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n package mechanical data 13/17 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
package mechanical data std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n 14/17 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
std10nm65n - STF10NM65N - stp10nm65n - stu10nm65n package mechanical data 15/17 5 package mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history std10nm65n - stf1 0nm65n - stp10nm65n - stu10nm65n 16/17 6 revision history table 9. document revision history date revision changes 26-oct-2007 1 initial release. 07-feb-2008 2 document status promoted fr om preliminary data to datasheet.
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